PE60P50 mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS =-60V,ID =-50A RDS(ON) <40mΩ @ VGS=-10V
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good st.
General Features
* VDS =-60V,ID =-50A RDS(ON) <40mΩ @ VGS=-10V
* High density cell design for ultra low Rdson <.
Image gallery
Download